CHANNELING LATTICE LOCATION OF SE IMPLANTED INTO INP BY RBS AND PIXE

The lattice location of Se atoms implanted into InP was studied by simultaneous RBS (for detecting In) and PIXE (for detecting Se), using 2.5 MeV proton ions in the channeling mode. For InP single crystals, the 〈111〉 atomic row consists of alternate In and P atoms, while in the 〈110〉 direction there exist pure In and P atomic rows. Since the channeling half-angle is proportional to Z21/2, where Z2 is the average atomic number of the constituent atoms in the row, it is possible to determine the specific lattice location and the substitutional fraction of Se atoms in InP by measuring angular distributions of Se and In across the 〈111〉 and 〈110〉 axes. The results show that Se atoms occupy P sites with different fractions depending on the implantation temperature and dose. © 1990.