N-TYPE DOPING OF INP BY ION-IMPLANTATION

被引：4

作者：

SUSSMANN, RS

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 03期

关键词：

D O I：

10.1007/BF02650867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：603 / 617

页数：15

共 18 条

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[3]

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POTTER, WD ;

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[5] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J].

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LORENZO, JP ;

RYAN, TG .

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[6]

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DONNELLY, JP ;

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[8] THE ELECTRICAL CHARACTERISTICS OF INP IMPLANTED WITH THE COLUMN-IV ELEMENTS [J].

DONNELLY, JP ;

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[9] THE EFFECT OF IMPLANT TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED INDIUM-PHOSPHIDE [J].

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HURWITZ, CE .

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[10] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y [J].

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