Numerical prediction of operational parameters in Czochralski growth of large-scale Si

Numerical calculation was performed on the fluid flow and mass transfer in large-scale Czochralski growth of silicon. The k-epsilon two equation model was used in order to simulate the turbulent characteristics of the fluid motions. The calculated axial and radial profiles of oxygen concentration showed good agreements with experiments in the case of 6 inch silicon growth. The average concentrations and the radial uniformities of oxygen for various crucible and crystal rotation rates for the case of 10 inch Si growth were calculated at the solidification interface. On the basis of the above results, the optimum starting conditions of the operation for the 10 inch size silicon grown by the Czochralski method were numerically calculated.