DOPANT SEGREGATION IN CZ AND MCZ SILICON CRYSTAL-GROWTH - A COMPARISON BETWEEN EXPERIMENT AND NUMERICAL-SIMULATION

被引：12

作者：

KIM, KM ^{[1
]}

LANGLOIS, WE ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096807

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1137 / 1142

页数：6

共 9 条

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[3] MASS-TRANSPORT IN A CZOCHRALSKI PULLER WITH A STRONG MAGNETIC-FIELD [J].

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[4] HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD [J].

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[5] COMPUTER-SIMULATION OF BORON TRANSPORT IN MAGNETIC CZOCHRALSKI GROWTH OF SILICON [J].

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[6]

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LINDROOS V, COMMUNICATION

[8]

Lucas L.D., 1964, MEM SCI REV METALL, V61, P1

[9] HEAT-TRANSFER IN SILICON CZOCHRALSKI CRYSTAL-GROWTH [J].

WILLIAMS, G ;

REUSSER, RE .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) :448-460

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