COMPUTER-SIMULATION OF BORON TRANSPORT IN MAGNETIC CZOCHRALSKI GROWTH OF SILICON

被引：27

作者：

KIM, KM ^{[1
]}

LANGLOIS, WE ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 12期

关键词：

D O I：

10.1149/1.2108476

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

11

引用

收藏

页码：2586 / 2590

页数：5

相关论文

共 11 条

[1] HJELLMING LN, J FLUID MECH
[2] HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD
HOSHIKAWA, K
KOHDA, H
HIRATA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L37 - L39
[3] STRIATIONS IN CZ SILICON-CRYSTALS GROWN UNDER VARIOUS AXIAL MAGNETIC-FIELD STRENGTHS
KIM, KM
SMETANA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2731 - 2735
[4] KIM KM, 1981, IBM TECH DISCLOSURE, V24, P3376
[5] DIGITAL-SIMULATION OF MAGNETIC CZOCHRALSKI FLOW UNDER VARIOUS LABORATORY CONDITIONS FOR SILICON GROWTH
LANGLOIS, WE
LEE, KJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1983, 27 (03) : 281 - 284
[6] CZOCHRALSKI CRYSTAL-GROWTH IN AN AXIAL MAGNETIC-FIELD - EFFECTS OF JOULE HEATING
LANGLOIS, WE
LEE, KJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 481 - 486
[7] LANGLOIS WE, 1982, 2ND P INT C BOUND IN
[8] LANGLOIS WE, 1978, 6TH P INT C NUM METH
[9] LEE KJ, 1984, PHYSICOCHEM HYDRODYN, V5, P135
[10] THE EFFECT OF AN EXTERNALLY IMPOSED MAGNETIC-FIELD ON BUOYANCY DRIVEN FLOW IN A RECTANGULAR CAVITY
OREPER, GM
SZEKELY, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 505 - 515