Three-levels conductance switching in an organic memory cell

被引：9

作者：

Caironi, M. ^{[1
]}

Natali, D. ^{[1
]}

Canesi, E. ^{[2
]}

Bianco, A. ^{[2
]}

Bertarelli, C. ^{[2
]}

Zerbi, G. ^{[2
]}

Sampietro, M. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, Unita IIT, I-20133 Milan, Italy

[2] Politecn Milan, Dipartimento Chim Ingn Chim & Mat, I-20133 Milan, Italy

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 21期

关键词：

conductance switching; organic memory; multilevel memory; electronic devices;

D O I：

10.1016/j.tsf.2008.03.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A solid-state memory based on a hindered phenol substituted bithiophene is reported, showing conductance switching behaviour between three discrete states among which it is possible to cycle repeatedly on the basis of three characteristic threshold voltages. The experimental measurements show that the addressing of the three states is independent of the programming time, that the retention time for each state is longer than 15 h and that the devices endure current-voltage cycles well in excess of 50. Considerations based on density functional theory calculations are made to provide hints on the mechanism behind this memory effect. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：7680 / 7684

页数：5

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