Increased electrical conductivity in fine-grained (Zr,Hf)NiSn based thermoelectric materials with nanoscale precipitates

被引：36

作者：

Xie, Han-Hui ^{[1
,2
]}

Yu, Cui ^{[1
,2
]}

Zhu, Tie-Jun ^{[1
,2
,3
]}

Fu, Chen-Guang ^{[1
,2
]}

Snyder, G. Jeffrey ^{[4
]}

Zhao, Xin-Bing ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[3] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Peoples R China

[4] CALTECH, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期

关键词：

HALF-HEUSLER ALLOYS; THERMAL-CONDUCTIVITY; FIGURE; MERIT; SEMICONDUCTORS; ENHANCEMENT; THERMOPOWER; TRANSPORT;

D O I：

10.1063/1.4730436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grain refinement has been conducted to reduce the thermal conductivity and improve the thermoelectric performance of the (Zr,Hf)NiSn based half-Heusler alloys. Nanoscale in situ precipitates were found embedded in the matrix with submicron grains. The lattice thermal conductivity was decreased due to the enhanced boundary scattering of phonons. The increased carrier concentration and electrical conductivity were observed compared to the coarse-grained alloys, which is discussed in relation to the existence of nanoscale precipitates, the effect of antisite defects, and composition change. It is suggested that the nanoscale precipitates play a significant role in the observed electrical conductivity increase. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730436]

引用

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