Self-organized complex patterning: Langmuir-Blodgett lithography

被引：56

作者：

Lenhert, S

Zhang, L

Mueller, J

Wiesmann, HP

Erker, G

Fuchs, H

Chi, LF ^{[1
]}

机构：

[1] Univ Munster, Inst Phys, D-48149 Munster, Germany

[2] Ctr Nanotechnol, D-48149 Munster, Germany

[3] Univ Klinikum Munster, Klin & Poliklin Mund & Kiefer Gesichtschirurgie, D-48149 Munster, Germany

[4] Univ Munster, Inst Organ Chem, D-48149 Munster, Germany

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 07期

关键词：

D O I：

10.1002/adma.200306203

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Self-patterning monolayer films prepared by the Langmuir-Blodgett technique have been used as resists for anisotropic chemical etching of Si (100). The resulting topographies are transferred onto polymer surfaces to guide the growth of biological cells. This method allows rapid and simple nanolithography of complex nanopatterns over large areas.

引用

页码：619 / +

页数：7

共 37 条

[1] Films built by depositing successive monomolecular layers on a solid surface [J].