D'yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

被引:26
作者
Cheremisin, MV [1 ]
Samsonidze, GG
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Montpellier 2, GES, F-34095 Montpellier 5, France
关键词
D O I
10.1134/1.1187732
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data. (C) 1999 American Institute of Physics. [S1063-7826(99)02005-0].
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收藏
页码:578 / 585
页数:8
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