Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires

被引：86

作者：

Gu, Yi

Romankiewicz, John P.

David, John K.

Lensch, Jessica L.

Lauhon, Lincoln J. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 05期

关键词：

D O I：

10.1021/nl052576y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The mobility-lifetime products (AY) for electrons and holes in CdS nanowires were quantitatively determined by scanning photocurrent microscopy of devices with ohmic contacts. Ohmic contacts were fabricated by ion bombardment of the contact regions. By analyzing the spatial profiles of the local photoconductivity maps, we determined that electron transport (mu(e)tau(e) approximate to 5 x 10(-7) cm(2)/V) was more efficient than hole transport (mu(h)tau(h) approximate to 10(-7) cm(2)/V). The results demonstrate that photocurrent mapping can provide quantitative insight into intrinsic carrier transport properties of semiconductor nanostructures.

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页码：948 / 952

页数：5

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