A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

被引：22

作者：

Chou, Tse-Heng ^{[1
]}

Fang, Yean-Kuen ^{[1
]}

Chiang, Yen-Ting ^{[1
]}

Lin, Cheng-I ^{[1
]}

Yang, Che-Yun ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 701, Taiwan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 147卷 / 01期

关键词：

homojunction; detector; UV; SiCN; RTCVD;

D O I：

10.1016/j.sna.2008.03.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel n-SiCN/p-SiCN homojunction was developed on Si Substrate for low cost and high temperature ultraviolet(UV) detecting applications. The current ratio of the junction under -5V bias, with and without irradiation of 254nm UV light are 1940 and 96.3, at room temperature and 175 degrees C, respectively. Compared to the reported UV detectors with material of 4H-SiCor beta-SiC, the developed n-SiCN/p-SiCN homojunction has better current ratio in both room and elevated temperature. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：60 / 63

页数：4

共 25 条

[21] Very high temperature operation of diamond Schottky diode [J].

Vescan, A ;

Daumiller, I ;

Gluche, P ;

Ebert, W ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :556-558

[22] Electrical performance of GaN Schottky rectifiers on Si substrates [J].

Voss, L. ;

Pearton, S. J. ;

Ren, F. ;

Bove, P. ;

Lahreche, H. ;

Thuret, J. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (07) :G681-G684

[23] GaN MSM photodetectors with TiW transparent electrodes [J].

Wang, CK ;

Chang, SJ ;

Su, YK ;

Chang, CS ;

Chiou, YZ ;

Kuo, CH ;

Lin, TK ;

Ko, TK ;

Tang, JJ .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 112 (01) :25-29

[24] High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures [J].

Xu, GY ;

Salvador, A ;

Kim, W ;

Fan, Z ;

Lu, C ;

Tang, H ;

Morkoc, H ;

Smith, G ;

Estes, M ;

Goldenberg, B ;

Yang, W ;

Krishnankutty, S .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2154-2156

[25] ZnO-based MIS photodetectors [J].

Young, S. J. ;

Ji, L. W. ;

Chang, S. J. ;

Liang, S. H. ;

Lam, K. T. ;

Fang, T. H. ;

Chen, K. J. ;

Du, X. L. ;

Xue, Q. K. .

SENSORS AND ACTUATORS A-PHYSICAL, 2007, 135 (02) :529-533

← 1 2 3 →