Unique extraction of substrate parameters of common-source MOSFET's

被引：21

作者：

Kim, CH ^{[1
]}

Kim, CS ^{[1
]}

Yu, HK ^{[1
]}

Nam, KS ^{[1
]}

机构：

[1] Micro Elect Technol Lab, Elect & Telecommun Res Inst, Taejon 305606, South Korea

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 03期

关键词：

MOSFET; small-signal equivalent circuit; substrate;

D O I：

10.1109/75.761676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The unique extraction method of small-signal substrate parameters for MOSFET transistors is proposed. To cover the output resistance reduction at microwave frequency range, drain substrate resistance as well as drain function capacitance is considered. Parasitic series resistances are extracted at the zero-gate-bias cold-FET condition using the asymptotic behavior of Z-parameters. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction.

引用

页码：108 / 110

页数：3

共 10 条

[1]

A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[2]

Kim CH, 1998, IEEE MICROW GUIDED W, V8, P96

[3]

Kim CS, 1997, IEEE MTT-S, P945, DOI 10.1109/MWSYM.1997.602956

[4]

A novel approach to extracting small-signal model parameters of silicon MOSFET's [J].

Lee, S ;

Yu, HK ;

Kim, CS ;

Koo, JG ;

Nam, KS .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (03) :75-77

[5]

LIU W, 1997, IEDM, P173

[6]

LOVELACE D, 1994, IEEE MTT-S, P865, DOI 10.1109/MWSYM.1994.335220

[7]

High Q CMOS-compatible microwave inductors using double-metal interconnection silicon technology [J].

Park, M ;

Lee, S ;

Yu, HK ;

Koo, JG ;

Nam, KS .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (02) :45-47

[8]

Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's [J].

Raskin, JP ;

Dambrine, G ;

Gillon, R .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (12) :408-410

[9]

HIGH-FREQUENCY PERFORMANCE OF SUBMICROMETER CHANNEL-LENGTH SILICON MOSFETS [J].

RAYNAUD, C ;

GAUTIER, J ;

GUEGAN, G ;

LERME, M ;

PLAYEZ, E ;

DAMBRINE, G .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :667-669

[10]

SUEMATSU N, 1997, IEEE RFIC, P9

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