Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiation

被引：4

作者：

Maser, K

Mohr, U

Leihkauf, R

Ecker, K

Beck, U

Grambole, D

Grötzschel, R

Herrmann, F

Krauser, J

Weidinger, A

机构：

[1] Tech Univ Berlin, Inst Mikroelekt & Festkorperelekt, D-10623 Berlin, Germany

[2] Bundesanstalt Mat Forsch & Prufung, D-12205 Berlin, Germany

[3] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

[4] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00356-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three effects have been observed in wet-thermally grown SiO2/Si structures under bombardement with energetic N-15 ions: (1) Out-diffusion of H from the SiO2/Si system through the surface, (2) Accumulation of H at the SiO2/Si interface, (3) Changes in the optical fingerprint spectra of Psi and Delta in dependence on lambda (wavelength) obtained by ellipsometric measurements.

引用

页码：139 / 142

页数：4

共 28 条

[1] Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen [J].