INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS

被引：274

作者：

GERARDI, GJ ^{[1
]}

POINDEXTER, EH ^{[1
]}

CAPLAN, PJ ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 06期

关键词：

D O I：

10.1063/1.97611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：348 / 350

页数：3

共 8 条

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[3]

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[5] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J].

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[6]

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[7] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J].

POINDEXTER, EH ;

CAPLAN, PJ ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :879-884

[8] ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION [J].

POINDEXTER, EH ;

GERARDI, GJ ;

RUECKEL, ME ;

CAPLAN, PJ ;

JOHNSON, NM ;

BIEGELSEN, DK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2844-2849

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