INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS

被引：467

作者：

POINDEXTER, EH ^{[1
]}

CAPLAN, PJ ^{[1
]}

DEAL, BE ^{[1
]}

RAZOUK, RR ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：879 / 884

页数：6

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