Ideally ordered anodic porous alumina mask prepared by imprinting of vacuum-evaporated Al on Si

被引：61

作者：

Masuda, H

Yasui, K

Sakamoto, Y

Nakao, M

Tamamura, T

Nishio, K

机构：

[1] Tokyo Metropolitan Univ, Dept Appl Chem, Tokyo 1920397, Japan

[2] NTT, Kanagawa 2430198, Japan

[3] NTT Elect, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 11B期

关键词：

anodic porous alumina; hole array; dot array; Si; imprinting; vacuum evaporation; dry etching;

D O I：

10.1143/JJAP.40.L1267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Application of imprinting of vacuum-evaporated Al on a Si substrate using an SiC mold with an ordered array of hexagonally arranged convexes and subsequent anodization yielded an ideally ordered porous alumina mask on the substrate. The obtained alumina mask has sufficient adhesion to a Si substrate, and was used as a mask for vacuum evaporation of metal and ion milling of the Si substrate.

引用

页码：L1267 / L1269

页数：3

共 13 条

[1] Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid [J].