Structural, chemical, and transport properties of a new clathrate compound:: Cs8Zn4Sn42

被引:82
作者
Nolas, GS
Weakley, TJR
Cohn, JL
机构
[1] Marlow Ind Inc, Div Res & Dev, Dallas, TX 75238 USA
[2] Univ Oregon, Dept Chem, Eugene, OR 97403 USA
[3] Univ Miami, Dept Phys, Coral Gables, FL 33124 USA
关键词
D O I
10.1021/cm990164i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The synthesis and structural, chemical, and transport properties of a new clathrate compound with elemental composition Cs8Zn4Sn42 is reported. This compound is cubic with space group Pm(3) over bar n and a lattice parameter of 12.1226(19) Angstrom. Single-crystal X-ray diffraction and structural refinement indicate that Cs atoms reside in the polyhedral cavities formed by the tetrahedrally bonded network of Zn and Sn atoms. The Cs atom in the larger polyhedra (tetrakaidecahedra) exhibit greater and more anisotropic thermal motion than those of the smaller polyhedra (dodecahedra). This "rattling" of the Cs contributes to the low thermal conductivity of this compound, obtained on a polycrystalline pellet. In addition, Zn is ordered in this compound. Electronic properties and the potential of this type of Sn-clathrate for thermoelectric applications are also discussed.
引用
收藏
页码:2470 / 2473
页数:4
相关论文
共 23 条
[1]   LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B .
PHYSICAL REVIEW, 1963, 131 (05) :1906-&
[2]   WIDE-BAND-GAP SI IN OPEN FOURFOLD-COORDINATED CLATHRATE STRUCTURES [J].
ADAMS, GB ;
OKEEFFE, M ;
DEMKOV, AA ;
SANKEY, OF ;
HUANG, YM .
PHYSICAL REVIEW B, 1994, 49 (12) :8048-8053
[3]   SIR92 - a program for automatic solution of crystal structures by direct methods [J].
ALTOMARE, A ;
CASCARANO, G ;
GIACOVAZZO, G ;
GUAGLIARDI, A ;
BURLA, MC ;
POLIDORI, G ;
CAMALLI, M .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1994, 27 :435-435
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   Glasslike heat conduction in high-mobility crystalline semiconductors [J].
Cohn, JL ;
Nolas, GS ;
Fessatidis, V ;
Metcalf, TH ;
Slack, GA .
PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782
[6]  
CROS C, 1965, CR HEBD ACAD SCI, V260, P4764
[7]   AII(8)BIII(16)BIV(30) COMPOUNDS (AII = SR, BA - BIII = AL, GA - BIV = SI, GE, SN) AND THEIR CAGE STRUCTURES [J].
EISENMANN, B ;
SCHAFER, H ;
ZAGLER, R .
JOURNAL OF THE LESS-COMMON METALS, 1986, 118 (01) :43-55
[8]  
Fassler TF, 1998, Z ANORG ALLG CHEM, V624, P569, DOI 10.1002/(SICI)1521-3749(199804)624:4<569::AID-ZAAC569>3.0.CO
[9]  
2-9
[10]  
Franks F., 1973, Water: A Comprehensive Treatise