Optimal thermal conditions for growth of Cd1-xMnxTe(:Cr) (:Cl) (:In) (:V) single crystals

被引:4
作者
Grasza, K [1 ]
Trivedi, SB [1 ]
Yu, ZC [1 ]
Kutcher, SW [1 ]
Brost, GA [1 ]
机构
[1] ROME LAB,ROME,NY 13441
关键词
crystal growth by Bridgman-Stockbarger method; CdMnTe; photorefractive materials; material for tunable solid-state lasers; temperature field computations; TEMPERATURE;
D O I
10.1016/S0022-0248(96)01152-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The optimal temperature profile required to produce a favorable growth interface and minimal stress for crystals grown by the Bridgman-Stockbarger method is determined. The computer program designed for our earlier work [1] was used to calculate the temperature distribution inside the solid and melt in the growth ampoule. The results were used for the construction of an improved experimental system and growth of high quality crystals.
引用
收藏
页码:263 / 266
页数:4
相关论文
共 11 条
[1]  
[Anonymous], 1988, SEMICONDUCTORS SEMIM
[2]   OBSERVATION OF THE PHOTOREFRACTIVE EFFECT IN VANADIUM-DOPED CDMNTE [J].
BROST, GA ;
MAGDE, KM ;
TRIVEDI, S .
OPTICAL MATERIALS, 1995, 4 (2-3) :224-226
[3]   CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE [J].
CHANG, CE ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :135-140
[4]   SOLIDIFICATION BEHAVIOR OF LOW AND HIGH THERMAL-CONDUCTIVITY MATERIALS IN A BRIDGMAN-STOCKBARGER FURNACE [J].
EJIM, TI ;
JESSER, WA ;
FRIPP, AL .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :509-514
[5]   TEMPERATURE-FIELD COMPUTATIONS IN PB1-XSNXTE CRYSTAL GROWN BY INVERTED BRIDGMAN METHOD [J].
GRASZA, K ;
ZUZGAGRASZA, U .
JOURNAL OF CRYSTAL GROWTH, 1992, 116 (1-2) :139-150
[6]  
GRASZA K, 1994, ELEMENTARY CRYSTAL G
[7]  
HUANG CE, 1984, J CRYST GROWTH, V69, P274
[8]   MEASURED CRITICAL RESOLVED SHEAR-STRESS AND CALCULATED TEMPERATURE AND STRESS-FIELDS DURING GROWTH OF CDZNTE [J].
PARFENIUK, C ;
WEINBERG, F ;
SAMARASEKERA, IV ;
SCHVEZOV, C ;
LI, L .
JOURNAL OF CRYSTAL GROWTH, 1992, 119 (3-4) :261-270
[9]   STEADY-STATE THERMAL MODELING OF CASTING OF SILICON [J].
RAJENDRAN, S ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :62-72
[10]  
STEER C, 1993, MRS S P, V302