Induction plasma synthesis of ultrafine SiC

被引:32
作者
Gitzhofer, F
机构
[1] Plasma Technology Research Center, Department of Chemical Engineering, University of Sherbrooke
关键词
D O I
10.1351/pac199668051113
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Induction plasma synthesis of ultrafine powders has been studied using different precursors, different plasma torch configurations and injection conditions. The long residence time available in the r.f. plasma, as well as the high temperature are necessary conditions for decomposition in the vapor phase of the injected species. High cooling rates of the plasma gas in the condensation region of the reactor guarantees homogeneous nucleation of SiC or doped SiC with limited heterogeneous nucleation by the reactor wall. Heat and mass transfer in the r.f. induction plasma have been intensively studied both experimentally and theoretically with the developement of reliable numerical models. The synthesis of SiC in the induction plasma can benefit from these data to design the reactors. Many parametric studies have shown that it is possible to influence and maintain SiC UFP quality. Solid elemental Si as a starting material is a promising avenue for UFP SiC synthesis.
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收藏
页码:1113 / 1120
页数:8
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