Phase-correcting feedback system for Class E power amplifier

被引：16

作者：

Sowlati, T ^{[1
]}

Greshishchev, YM ^{[1
]}

Salama, CAT ^{[1
]}

机构：

[1] NORTEL TECHNOL,OTTAWA,ON K1Y 4H7,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

digital cellular; gallium arsenide; mobile transceivers;

D O I：

10.1109/4.563676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A phase-correcting feedback system which reduces the AM-to-PM distortion of Class E power amplifiers for wireless communication is presented in this paper, It comprises a novel limiting amplifier, a phase detector, and a phase shifter all operating at 835 MHz. The phase-correcting feedback together with a Class E power amplifier were fabricated in a 0.8-mu m GaAs MESFET process, The limiting amplifier has a phase error less than 2.5 degrees. The phase detector and phase shifter have a sensitivity of 10 mV/degree and 80 degrees/V, respectively, The Class E power amplifier delivers 26.5 dBm to the load with a power added efficiency of 67%, The phase correcting feedback system reduces the 30 degrees phase distortion of the Class E amplifier down to 4 degrees, and its total power dissipation is 21.5 mW.

引用

页码：544 / 550

页数：7

共 7 条

[1] A 0.7-3 GHZ GAAS QPSK QAM DIRECT MODULATOR [J].

BOVEDA, A ;

ORTIGOSO, F ;

ALONSO, JI .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (12) :1340-1349

[2]

CHIBA K, 1990, IEEE GCOM 90 DEC, P1958

[3]

HETZEL SA, 1991, IEEE VEH TECHN C P, P133

[4]

*HEWL PACK, 1994, HP MICR RF DES SYST

[5]

LOHTIA A, 1993, IEEE VEHICULAR TECHN, P676

[6] LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS [J].

SOWLATI, T ;

SALAMA, CAT ;

SITCH, J ;

RABJOHN, G ;

SMITH, D .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (10) :1074-1080

[7]

SOWLATI T, 1996, IEEE CUST INT CIRC C, P201

← 1 →