LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS

被引：67

作者：

SOWLATI, T ^{[1
]}

SALAMA, CAT ^{[1
]}

SITCH, J ^{[1
]}

RABJOHN, G ^{[1
]}

SMITH, D ^{[1
]}

机构：

[1] BELL NO RES LTD,OTTAWA,ON K1Y 4H7,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1995年 / 30卷 / 10期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/4.466076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a Class E power amplifier for mobile communications is presented, The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed, A fully integrated Class E power amplifier module operating at 835 MHz is designed, fa bricated, and tested. The circuit is implemented in a self-aligned-gate, depletion mode 0.8-mu m GaAs MESFET process, The amplifier delivers 24 dBm of power to the 50-Omega load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistors.

引用

页码：1074 / 1080

页数：7

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