Orientation-controlled epitaxy and anisotropic properties of La2-xSrxNiO4 with 0.5≤x≤1.5 covering the insulator-metal transition

被引：21

作者：

Shinomori, S

Kawasaki, M

Tokura, Y

机构：

[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[2] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan

[3] Natl Inst Adv Ind Sci & Technol, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1436523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The a- and c-axis-oriented epitaxial thin films of layered nickelate La2-xSrxNiO4 (0.5less than or equal toxless than or equal to1.5), of which bulk single crystals are not available, were grown on LaSrAlO4 (100) and (LaAlO3)(0.3)(SrAl0.5Ta0.5O3)(0.7) (001) substrates, respectively. Due to the in-plane anisotropy of the lattice mismatch, the lattice parameters of the a-axis-oriented films vary with x in a different manner from those of the ceramics. In the a-axis-oriented films, resistivity, and optical spectra show large anisotropy between the b and c axes, indicating the quasi-two-dimensional nature of the electronic structure in La2-xSrxNiO4. (C) 2002 American Institute of Physics.

引用

页码：574 / 576

页数：3

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