Anisotropic resistivity of In-plane-aligned La2-xSrxCuO4(100) films on LaSrGaO4(100) substrates

We prepared in-plane aligned La2-xSrxCuO4(100) films using LaSrGaO4(100) substrates by KrF laser ablation. The phi scan of X-ray diffraction and the large anistropy of resistivity indicate a high degree of in-plane epitaxy. The T-c of the in-plane-aligned La2-xSrxCuO4 (x = 0.15) was 21.6 K. The critical temperatures measured along the c-axis were usually higher than those measured along the a-axis. We also observed voltage peaks at just above T-c, corresponding to the abrupt decrease of the anistropy of resistivity at T-c.