Mean barrier height of Pd Schottky contacts on ZnO thin films

被引：129

作者：

von Wenckstern, H ^{[1
]}

Biehne, G ^{[1
]}

Rahman, RA ^{[1
]}

Hochmuth, H ^{[1
]}

Lorenz, M ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.2180445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the temperature dependence of the barrier height of high-quality Pd Schottky contacts on (0001)-oriented ZnO thin films by temperature-dependent current-voltage and capacitance-voltage (CV) measurements. The films have been grown by pulsed-laser deposition. The effective Schottky barrier height Phi(B,eff) deduced from the current-voltage measurements was evaluated by considering a Gaussian barrier height distribution with a standard deviation sigma around a mean barrier height Phi(B,m). We determined Phi(B,m)=(1.16 +/- 0.04) eV which agrees well with the value of 1.14 eV determined by CV measurements. The standard deviation is determined to be (134 +/- 10) meV. (c) 2006 American Institute of Physics.

引用

页数：3

共 24 条

[1] Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes [J].

Acar, S ;

Karadeniz, S ;

Tugluoglu, N ;

Selçuk, AB ;

Kasap, M .

APPLIED SURFACE SCIENCE, 2004, 233 (1-4) :373-381

[2] Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes [J].

Akkiliç, K ;

Türüt, A ;

Çankaya, G ;

Kiliçoglu, T .

SOLID STATE COMMUNICATIONS, 2003, 125 (10) :551-556

[3] PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS [J].

ARANOVICH, JA ;

GOLMAYO, D ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4260-4268

[4] Simulation and analysis of the I-V characteristics of a Schottky diode containing barrier inhomogeneities [J].

Chand, S ;

Kumar, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) :899-906

[5] Effects of barrier height distribution on the behavior of a Schottky diode [J].

Chand, S ;

Kumar, J .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5005-5010

[6] Palladium Schottky barrier contacts to hydrothermally grown n-ZnO and shallow electron states [J].

Grossner, U ;

Gabrielsen, S ;

Borseth, TM ;

Grillenberger, J ;

Kuznetsov, AY ;

Svensson, BG .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2259-2261

[7] Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs [J].

Gümüs, A ;

Türüt, A ;

Yalçin, N .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :245-250

[8] WORK FUNCTION, ELECTRON-AFFINITY AND BAND BENDING OF ZINC-OXIDE SURFACES [J].

JACOBI, K ;

ZWICKER, G ;

GUTMANN, A .

SURFACE SCIENCE, 1984, 141 (01) :109-125

[9] High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition [J].

Kaidashev, EM ;

Lorenz, M ;

von Wenckstern, H ;

Rahm, A ;

Semmelhack, HC ;

Han, KH ;

Benndorf, G ;

Bundesmann, C ;

Hochmuth, H ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3901-3903

[10] Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(100) Schottky contacts [J].

Karatas, S ;

Altindal, S ;

Türüt, A ;

Özmen, A .

APPLIED SURFACE SCIENCE, 2003, 217 (1-4) :250-260

← 1 2 3 →