Transient terahertz conductivity in photoexcited silicon nanocrystal films

被引：141

作者：

Cooke, D. G. ^{[1
]}

MacDonald, A. N.

Hryciw, A.

Wang, J.

Li, Q.

Meldrum, A.

Hegmann, F. A.

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.73.193311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved terahertz spectroscopy is used to probe ultrafast carrier dynamics and terahertz conductivity in photoexcited thin films of silicon nanocrystals, polynanocrystalline silicon, and epitaxial silicon-on-sapphire. We show that a Drude-Smith model provides an excellent fit to the observed transient terahertz conductivity in all of our samples, revealing a transition from a Drude-like response with low carrier backscatter in bulk silicon-on-sapphire to a non-Drude-like, localized behavior with high carrier backscatter in the silicon nanocrystal films. Evidence for long-range conduction between nanocrystals is observed, and we show that the photoconductive lifetime of the silicon nanocrystals is dominated by trapping at Si/SiO2 interface states.

引用

页数：4

共 31 条

[1] Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy [J].

Altan, H ;

Huang, F ;

Federici, JF ;

Lan, AD ;

Grebel, H .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) :6685-6689

[2] Electronic coupling in InP nanoparticle arrays [J].

Beard, MC ;

Turner, GM ;

Murphy, JE ;

Micic, OI ;

Hanna, MC ;

Nozik, AJ ;

Schmuttenmaer, CA .

NANO LETTERS, 2003, 3 (12) :1695-1699

[3] Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy [J].

Beard, MC ;

Turner, GM ;

Schmuttenmaer, CA .

PHYSICAL REVIEW B, 2000, 62 (23) :15764-15777

[4] Apparent stretched-exponential luminescence decay in crystalline solids [J].

Chen, R .

JOURNAL OF LUMINESCENCE, 2003, 102 :510-518

[5] H-sensitive radiative recombination path in Si nanoclusters embedded in SiO2 -: art. no. 213110 [J].

Comedi, D ;

Zalloum, OHY ;

Mascher, P .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[6] Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy [J].

Cooke, DG ;

Hegmann, FA ;

Mazur, YI ;

Ma, WQ ;

Wang, X ;

Wang, ZM ;

Salamo, GJ ;

Xiao, M ;

Mishima, TD ;

Johnson, MB .

APPLIED PHYSICS LETTERS, 2004, 85 (17) :3839-3841

[7] Observation of Si cluster formation in SiO2 films through annealing process using x-ray photoelectron spectroscopy and infrared techniques [J].

Furukawa, K ;

Liu, YC ;

Nakashima, H ;

Gao, DW ;

Uchino, K ;

Muraoka, K ;

Tsuzuki, H .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :725-727

[8] Interchain effects in the ultrafast photophysics of a semiconducting polymer:: THz time-domain spectroscopy of thin films and isolated chains in solution -: art. no. 125201 [J].

Hendry, E ;

Koeberg, M ;

Schins, JM ;

Nienhuys, HK ;

Sundström, V ;

Siebbeles, LDA ;

Bonn, A .

PHYSICAL REVIEW B, 2005, 71 (12)

[9] Infrared studies of the onset of conductivity in ultrathin Pb films [J].

Henning, PF ;

Homes, CC ;

Maslov, S ;

Carr, GL ;

Basov, DN ;

Nikolic, B ;

Strongin, M .

PHYSICAL REVIEW LETTERS, 1999, 83 (23) :4880-4883

[10] Tunable luminescence from a silicon-rich oxide microresonator [J].

Hryciw, A ;

Laforge, J ;

Blois, C ;

Glover, M ;

Meldrum, A .

ADVANCED MATERIALS, 2005, 17 (07) :845-+

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