Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

被引：21

作者：

Altan, H ^{[1
]}

Huang, F

Federici, JF

Lan, AD

Grebel, H

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[2] New Jersey Inst Technol, Elect Imaging Ctr, Newark, NJ 07102 USA

[3] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 11期

关键词：

D O I：

10.1063/1.1805720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have conducted visible pump-THz (THz-terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed. (C) 2004 American Institute of Physics.

引用

页码：6685 / 6689

页数：5

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