Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy

被引：202

作者：

Beard, MC ^{[1
]}

Turner, GM ^{[1
]}

Schmuttenmaer, CA ^{[1
]}

机构：

[1] Yale Univ, Dept Chem, New Haven, CT 06520 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.1416140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transient photoconductivity in a 1 mum layer of low temperature grown GaAs (LT-GaAs) on a GaAs substrate was measured using time-resolved terahertz spectroscopy. When photoexcitation occurs at 400 nm we find a time-dependent mobility that increases from 400 +/- 100 to 1100 +/- 100 cm(2) V-1 s(-1) with a time constant of 2 ps. Photoexcitation at 800 nm produces a time-independent mobility of 3000 +/- 500 cm(2) V-1 s(-1). We determine the carrier lifetime in LT-GaAs to be 1.1 +/- 0.1 ps. (C) 2001 American Institute of Physics.

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页码：5915 / 5923

页数：9

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