Transport properties of silicon implanted with bismuth

The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X10(17) to 1.4X10(20) cm(-3) Were measured from room temperature down to 13 K. The samples were prepared by Bi+ implantation in Van der Pauw structures delineated in Si chips. The measured resistivities were compared with the ones calculated by a generalized Drude approach at similar temperatures and doping concentration, presenting fairly good agreement. The critical impurity concentration N-c of the metal-nonmetal transition was measured to be around 2X10(19) cm(-3). The critical concentration N-c was calculated by comparing the ionization energy of the insulating phase with the total energy of the metallic phase. This value of N-c agreed very well with the one obtained experimentally and the values estimated from other theoretical approaches.