CRITICAL CONDUCTIVITY EXPONENT FOR SI-B

被引:106
作者
DAI, PH
ZHANG, YH
SARACHIK, MP
机构
[1] City College, City University of New York, New York
关键词
D O I
10.1103/PhysRevLett.66.1914
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have determined the critical exponent which characterizes the approach of the zero-temperature conductivity to the insulating phase from measurements down to 60 mK of the resistivity of a series of just-metallic uncompensated p-type Si:B samples with dopant concentrations near the critical concentration for the metal-insulator transition. Our results indicate a critical exponent for Si:B of 0.65(-0.14)+0.05, which is close to the "anomalous" values near 1/2 found for the uncompensated n-type silicon-based semiconductors Si:P, Si:As, and Si:Sb. This implies that, despite strong spin-orbit scattering, Si:B belongs to the same universality class as other silicon-based systems.
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页码:1914 / 1917
页数:4
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