CRITICAL CONDUCTIVITY EXPONENT FOR SI-B

被引:106
作者
DAI, PH
ZHANG, YH
SARACHIK, MP
机构
[1] City College, City University of New York, New York
关键词
D O I
10.1103/PhysRevLett.66.1914
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have determined the critical exponent which characterizes the approach of the zero-temperature conductivity to the insulating phase from measurements down to 60 mK of the resistivity of a series of just-metallic uncompensated p-type Si:B samples with dopant concentrations near the critical concentration for the metal-insulator transition. Our results indicate a critical exponent for Si:B of 0.65(-0.14)+0.05, which is close to the "anomalous" values near 1/2 found for the uncompensated n-type silicon-based semiconductors Si:P, Si:As, and Si:Sb. This implies that, despite strong spin-orbit scattering, Si:B belongs to the same universality class as other silicon-based systems.
引用
收藏
页码:1914 / 1917
页数:4
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共 35 条
  • [31] Van de Pauw L.J., 1958, PHILIPS RES REP, V13, P1
  • [32] METAL-NONMETAL TRANSITION AND SUPERCONDUCTIVITY IN AMORPHOUS SI1-XAUX SYSTEM
    YAMAGUCHI, M
    NISHIDA, N
    FURUBAYASHI, T
    MORIGAKI, K
    ISHIMOTO, H
    ONO, K
    [J]. PHYSICA B & C, 1983, 117 (MAR): : 694 - 696
  • [33] YOSHIZUMI S, 1985, LOCALIZATION METAL I, P77
  • [34] METAL-INSULATOR-TRANSITION IN AMORPHOUS GA-AR MIXTURES - CRITICAL EXPONENTS OF ELECTRICAL TRANSPORT PARAMETERS AND BEHAVIOR OF SUPERCONDUCTIVITY
    ZINT, T
    ROHDE, M
    MICKLITZ, H
    [J]. PHYSICAL REVIEW B, 1990, 41 (07): : 4831 - 4833
  • [35] [No title captured]