UNIVERSALITY OF THE SCALING EXPONENTS FOR THE T=0 CONDUCTIVITY AND HALL-COEFFICIENT FOR VERY WEAKLY COMPENSATED BARELY METALLIC SILICON - RESPONSE

被引：10

作者：

DAI, PH ^{[1
]}

BOGDANOVICH, S ^{[1
]}

ZHANG, YZ ^{[1
]}

SARACHIK, MP ^{[1
]}

机构：

[1] CUNY CITY COLL, DEPT PHYS, NEW YORK, NY 10031 USA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.52.12439

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that within the uncertainties of the experiments, the longitudinal conductivity a and the inverse Hall coefficient (R(H))(-1) tend toward zero at the same dopant concentration n = n(c), implying that the Hall coefficient diverges at the metal-insulator transition. The precise numerical value of the critical concentration n(c) is irrelevant in this context. We claim, in any event, that Castner's reclassification of several samples near the transition as insulating rather than metallic is based on fallacious arguments.

引用

页码：12439 / 12440

页数：2

共 6 条

[1] UNIVERSALITY OF THE SCALING EXPONENTS FOR THE T=0 CONDUCTIVITY AND HALL-COEFFICIENT FOR VERY WEAKLY COMPENSATED BARELY METALLIC SILICON [J].