CRITICAL-BEHAVIOR OF THE HALL-COEFFICIENT OF SI-B

被引:23
作者
DAI, PH
ZHANG, YZ
SARACHIK, MP
机构
[1] Department of Physics, City College, City University of New York, New York
关键词
D O I
10.1103/PhysRevLett.70.1968
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Measurements between 0.05 and 1 K in magnetic fields small enough to ensure linear response (B < 1 T) indicate that the Hall coefficient of Si:B diverges at the metal-insulator transition. This is similar to Ge:Sb and differs from the finite behavior claimed for Si:As and Si:P. Our result may be due to strong spin-orbit effects; it is inconsistent with a recent suggestion that the Hall coefficient is finite in systems with critical conductivity exponent mu almost-equal-to 1/2.
引用
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页码:1968 / 1971
页数:4
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