CRITICAL CONDUCTIVITY EXPONENT OF SI-P IN A MAGNETIC-FIELD

被引：29

作者：

DAI, PH

ZHANG, YZ

BOGDANOVICH, S

SARACHIK, MP

机构：

[1] Physics Department, City College of the City University of New York, New York

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.48.4941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The critical conductivity exponent of Si:P changes from near 1/2 in zero field to 0.86 +/- 0.15 in a magnetic field of 8 T, consistent with the theoretical expectation of 1. According to recent theory, similar behavior found earlier in Si:B, where spin-orbit scattering is strong, corresponds to the universality class for magnetic impurities. These measurements in Si:P thus constitute a clear determination of the critical conductivity exponent near the metal-insulator transition in the universality class for high magnetic field.

引用

页码：4941 / 4943

页数：3

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[2]

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[3]

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