CRITICAL-BEHAVIOR OF THE CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：14

作者：

CASTNER, TG

机构：

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.73.3600

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3600 / 3600

页数：1

共 6 条

[1] STRESS TUNING OF THE METAL-INSULATOR-TRANSITION AT MILLIKELVIN TEMPERATURES [J].

PAALANEN, MA ;

ROSENBAUM, TF ;

THOMAS, GA ;

BHATT, RN .

PHYSICAL REVIEW LETTERS, 1982, 48 (18) :1284-1287

[2] DC CONDUCTIVITY OF ARSENIC-DOPED SILICON NEAR THE METAL-INSULATOR-TRANSITION [J].

SHAFARMAN, WN ;

KOON, DW ;

CASTNER, TG .

PHYSICAL REVIEW B, 1989, 40 (02) :1216-1231

[3] POSSIBLE SOLUTION OF THE CONDUCTIVITY EXPONENT PUZZLE FOR THE METAL-INSULATOR-TRANSITION IN HEAVILY-DOPED UNCOMPENSATED SEMICONDUCTORS [J].

STUPP, H ;

HORNUNG, M ;

LAKNER, M ;

MADEL, O ;

VONLOHNEYSEN, H .

PHYSICAL REVIEW LETTERS, 1993, 71 (16) :2634-2637

[4] CRITICAL-BEHAVIOR OF SI-P AT THE METAL-INSULATOR-TRANSITION - REPLY [J].

STUPP, H ;

HORNUNG, M ;

LAKNER, M ;

MADEL, O .

PHYSICAL REVIEW LETTERS, 1994, 72 (13) :2122-2122

[5] MEASUREMENTS OF CONDUCTIVITY NEAR THE METAL-INSULATOR CRITICAL-POINT [J].

THOMAS, GA ;

PAALANEN, M ;

ROSENBAUM, TF .

PHYSICAL REVIEW B, 1983, 27 (06) :3897-3900

[6] THEORY OF HOPPING TRANSPORT IN DISORDERED SEMICONDUCTORS [J].

ZVYAGIN, IP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (02) :443-449

← 1 →