The strange behavior of interstitial H2 molecules Si and GaAs

被引:10
作者
Estreicher, SK [1 ]
McAfee, JL
Fedders, PA
Pruneda, JM
Ordejón, P
机构
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[2] Washington Univ, Dept Phys, St Louis, MO 63130 USA
[3] Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
[4] Univ Autonoma Barcelona, CSIC, Inst Ciencia Mat, E-08193 Barcelona, Spain
关键词
molecular dynamics; hydrogen; silicon; gallium arsenide;
D O I
10.1016/S0921-4526(01)00721-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Interstitial H-2 molecules have been observed in GaAs and in Si and behave very differently in the two hosts. In GaAs, H-2 has rotational symmetry, a stretch frequency close to the free-molecule value, and the Raman spectrum exhibits the expected ortho/para splitting. In Si, the symmetry is C-1, the stretch frequency is about 550 cm(-1) lower than that of free H-2, and no ortho/para splitting is seen. In this paper, we use ab-initio molecular-dynamics simulations (SIESTA) to calculate the vibrational frequencies of H-2 using linear response theory as well as the velocity-velocity autocorrelation function. We also study the interactions between H-2 and O-i as well as paramagnetic H in Si. Based on these calculations and arguments about the formation process of H-2, we argue that rapid H(2)reversible arrowH(T)(0) interactions are a possible candidate to explain the absence of ortho-H-2 in Si. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:202 / 205
页数:4
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