Step coverage characteristics of Pb(Zr, Ti)O-3 thin films on various electrode materials by metalorganic chemical vapor deposition

被引：25

作者：

Shimizu, M ^{[1
]}

Hyodo, S ^{[1
]}

Fujisawa, H ^{[1
]}

Niu, H ^{[1
]}

Shiosaki, T ^{[1
]}

机构：

[1] KYOTO UNIV,GRAD SCH ENGN,DEPT ELECT SCI & ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期

关键词：

step coverage; Pb(Zr; Ti)O-3 thin films; MOCVD; Pt/SiO2; Ir/SiO2; IrO2/SiO2;

D O I：

10.1143/JJAP.36.5808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The step coverage characteristics of Pb(Zr, Ti)O-3 (PZT) thin films on steps with various electrode materials, such as Pt/SiO2, Ir/SiO2 and IrO2/SiO2, by metalorganic chemical vapor deposition (MOCVD) were investigated. The step coverage of PZT films deposited on Pt/SiO2 at 500 and 550 degrees C was 80-87%. Deformation of Pt/SiO2 steps was observed when PZT films were deposited at 600 degrees C. The cause of this deformation of steps was mainly the diffusion of Pb into the steps. When PZT thin films were deposited on Ir/SiO2 at 560-600 degrees C and IrO2/SiO2 at 500 and 550 degrees C, good step coverage of 76-93% and 70-85% was obtained, respectively.

引用

页码：5808 / 5811

页数：4

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