A low-temperature route to InP nanocrystals

被引：46

作者：

Yan, P

Xie, Y ^{[1
]}

Wang, WZ

Liu, FY

Qian, YT

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China

[2] Univ Sci & Technol China, Dept Chem, Anhua 230026, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1999年 / 9卷 / 08期

关键词：

D O I：

10.1039/a902142f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanocrystalline InP was prepared at temperatures of 80-160 degrees C through a novel route: 4InCl(3) + 12KBH(4) + P-4<(en)under right arrow>4InP. Mean crystallite dimensions of 11.3-20 nm were determined from X-ray powder diffraction. Transmission electron microscopy images showed that the products were 15-20 nm spherical grains when prepared at 120 degrees C and 150 x 1500 nm rod-like grains at 160 degrees C. The reaction proceeds through a metallic indium intermediate and a solution-liquid-solid mechanism is proposed for the one-dimensional growth. The products were also investigated by UV/vis absorption, photoluminescence, Fourier-transform IR, and X-ray photoelectron spectroscopy.

引用

页码：1831 / 1833

页数：3

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