Spectral analysis of InGaAs/GaAs quantum-dot lasers

被引：28

作者：

Smowton, PM ^{[1
]}

Johnston, EJ

Dewar, SV

Hulyer, PJ

Summers, HD

Patanè, A

Polimeni, A

Henini, M

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期

关键词：

D O I：

10.1063/1.124954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 mu m). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02741-2].

引用

页码：2169 / 2171

页数：3

共 16 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].

AFROMOWITZ, MA .

SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3]

Arzhanov E. V., 1994, Quantum Electronics, V24, P581, DOI 10.1070/QE1994v024n07ABEH000144

[4] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[5] Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers [J].

Avrutsky, IA ;

Gordon, R ;

Clayton, R ;

Xu, JM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (10) :1801-1809

[6] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[7]

Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)

[8]

GRAY DE, 1972, AM I PHYSICS HDB

[9] Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers [J].

Harris, L ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :969-971

[10] Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum [J].

Hofstetter, D ;

Thornton, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (10) :1914-1923

← 1 2 →