InGaAs-GaAs quantum-dot lasers

被引:469
作者
Bimberg, D [1 ]
Kirstaedter, N [1 ]
Ledentsov, NN [1 ]
Alferov, ZI [1 ]
Kopev, PS [1 ]
Ustinov, VM [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
关键词
characteristic temperature; gain; linewidth enhancement factor; quantum-dot gain; semiconductor lasers; threshold current density;
D O I
10.1109/2944.605656
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states, Record threshold current densities of 40 A.cm(-2) at 77 K and of 62 A.cm(-2) at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of similar to 80%. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to similar to 50 meV, ultrahigh material gain of similar to 10(5) cm(-1), differential gain of similar to 10(-13) cm(2) and strong nonlinear gain effects with a gain compression coefficient of similar to 10(-16) cm(3). The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states, The linewidth enhancement factor is similar to 0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 mu m and 1.37 mu m al 300 K.
引用
收藏
页码:196 / 205
页数:10
相关论文
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