Solution processed top-gate n-channel transistors and complementary circuits on plastics operating in ambient conditions

被引：111

作者：

Yan, He ^{[1
]}

Zheng, Yan ^{[1
]}

Blache, Robert ^{[2
]}

Newman, Christopher ^{[1
]}

Lu, Shaofeng ^{[1
]}

Woerle, Jasmin ^{[2
]}

Facchetti, Antonio ^{[1
]}

机构：

[1] Polyera Corp, Skokie, IL 60077 USA

[2] PolylC GmbH & Co KG, D-90763 Furth, Germany

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 18期

关键词：

D O I：

10.1002/adma.200800629

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Top-gate n-TFTs and CMOS circuits on plastic substrates based on solution-processed n- and p-channel semiconductors and polymeric dielectrics have been fabricated. These unencapsulated devices exhibit good performance characteristics in ambient.

引用

页码：3393 / +

页数：7

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