共 30 条
- [1] CREATION OF DEEP GAP STATES IN SI DURING CL2 OR HBR PLASMA ETCH EXPOSURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1332 - 1336
- [2] REACTIVE ION ETCHING OF SILICON USING BROMINE CONTAINING PLASMAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 1696 - 1701
- [3] OPERATIONAL CHARACTERISTICS OF SF6 ETCHING IN AN ELECTRON-CYCLOTRON RESONANCE PLASMA REACTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 318 - 324
- [4] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167
- [6] FANG S, 1991, IEDM, P61
- [7] CHARGING DAMAGE TO GATE OXIDES IN AN O-2 MAGNETRON PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 4865 - 4872
- [9] GABRIEL CT, 1992, SOLID STATE TECHNOL, V35, P81
- [10] GATE OXIDE DAMAGE FROM POLYSILICON ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 370 - 373