Analysis of laser diode thermal properties with spatial resolution by means of the TRAIT method

被引：32

作者：

Oliveti, G ^{[1
]}

Piccirillo, A ^{[1
]}

Bagnoli, PE ^{[1
]}

机构：

[1] UNIV PISA, DIPARTIMENTO INGN INFORMAZ, I-56100 PISA, ITALY

来源：

MICROELECTRONICS JOURNAL | 1997年 / 28卷 / 03期

关键词：

D O I：

10.1016/S0026-2692(96)00032-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal resistance analysis by induced transient (TRAIT) method is a characterization technique which allows experimental evaluation of the total thermal resistance Rth of a semiconductor device and its assembling structure with a spatial resolution. This means that Rth can be known as a sum of several contributions due to various parts of the system. This technique is mainly based on the analysis of the system thermal dynamic behaviour. The capabilities of the method were demonstrated by applying the analysis to semiconductor laser devices in order to investigate the thermal properties and reliability of their packages. (C) 1997 Elsevier Science Ltd.

引用

页码：293 / 300

页数：8

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PICCIRILLO, A ;

OLIVETI, G ;

CIAMPA, M ;

BAGNOLI, PE .

ELECTRONICS LETTERS, 1993, 29 (03) :318-320

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