Characteristics of post-annealed SrTiO3 thin films prepared by mirror-confinement-type ECR plasma sputtering

被引：18

作者：

Baba, So ^{[1
]}

Numata, Ken ^{[2
]}

Miyake, Shoji ^{[1
]}

机构：

[1] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan

[2] Kanagawa High Technol Fdn, KSP Bldg,East 101,3-2-1 Sakado, Kawasaki, Kanagawa 2130012, Japan

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2000年 / 1卷 / 04期

关键词：

SrTiO3; Post-annealing; Low temperature synthesis; Electromagnetic-wave radiation; Minor-confinement-type ECR plasma sputtering;

D O I：

10.1016/S1468-6996(01)00006-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SrTiO3 films were synthesized on Pt/Ti/SiO2/Si multilayer substrates by minor-confinement-type ECR plasma sputtering without substrate heating. All films were found to be well crystallized at a substrate temperature below 450 K. A low temperature post-annealing of the films by electromagnetic-wave radiation drastically improved the crystallographic and electric properties of Pt/SrTiO3/Pt/Ti/SiO2/Si capacitors. The crystallinity of the films indicated little variation by post-annealing, but irradiation of electromagnetic wave was confirmed to be effective for decreasing the post-annealing time and temperature. The electric properties of films annealed without Pt upper electrodes were better than those with them, and the film dielectric constant reached a value of 260, which is nearly equal to the bulk one, at an annealing temperature of 573 K. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：211 / 217

页数：7

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