CONTROL OF GRAIN-STRUCTURE OF LASER-DEPOSITED (BA, SR)TIO3 FILMS TO REDUCE LEAKAGE CURRENT

被引：36

作者：

BHATTACHARYA, P

PARK, KH

NISHIOKA, Y

机构：

[1] Texas Instruments, Tsukuba Research and Development Center Limited, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

LASER ABLATION; (BA; SR)TIO3; DIELECTRIC CONSTANT; LEAKAGE CURRENT;

D O I：

10.1143/JJAP.33.5231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique to realize a low leakage current of (Ba, Sr)TiO3 (BSTO) thin films by controlling the grain structure of BSTO has been proposed. This includes the deposition of amorphous BSTO at 500 degrees C and annealing of the amorphous films at 650 degrees C in O-2 for crystallization. The leakage current of the film produced from the amorphous one was significantly lower than that of BSTO films deposited directly at the substrate temperature of 650 degrees C. The crystalline structure of the film produced from the amorphous one was found to be circular. In contrast, as-grown crystalline film showed columnar grain structures. The reduction of the leakage current may be attributed to the differences in the grain structures.

引用

页码：5231 / 5234

页数：4

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