Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics:: In situ annealing studies

被引：72

作者：

Kim, H ^{[1
]}

Marshall, A

McIntyre, PC

Saraswat, KC

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1667621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallization kinetics of similar to3 nm HfO2 films grown by atomic layer deposition (ALD) on SiO2-passivated Si (100) wafers were investigated using an in situ transmission electron microscope (TEM) with heating capability. Through gray-scale analysis of dark-field TEM images, it was found that a two-dimensional nucleation and growth mechanism with a decreasing of nucleation rate could account for the observed transformation rate behavior. The effects of crystalline defects (e.g., grain boundaries) on the leakage current were studied using a reduced pressure in situ postdeposition anneal in the ALD system to avoid interfacial SiO2 growth. The leakage current magnitude and temperature dependence were found to be essentially independent of the microstructural changes that accompany crystallization of the HfO2 films. (C) 2004 American Institute of Physics.

引用

页码：2064 / 2066

页数：3

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