Single-layer thin HfO2 gate dielectric with n+-polysilicon gate

被引：70

作者：

Kang, LG ^{[1
]}

Jeon, Y ^{[1
]}

Onishi, K ^{[1
]}

Lee, BH ^{[1
]}

Qi, WJ ^{[1
]}

Nieh, R ^{[1
]}

Gopalan, S ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852762

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

MOSCAPs and MOSFETs of a single-layer thin HfO2 gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfO2 remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.

引用

页码：44 / 45

页数：2

共 4 条

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