Characterization of polysilicon-gate depletion in MOS structures

被引：29

作者：

Ricco, B

Versari, R

Esseni, D

机构：

[1] Department of Electronics, University of Bologna

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 03期

关键词：

D O I：

10.1109/55.485181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new technique to characterize the depletion capacitance and (active) impurity concentration of gate polysilicon in MOS transistors. The method has been validated by means of 2-D simulation; experimental results obtained with state-of-the-art n-channel 0.5 micrometer transistors are presented.

引用

收藏

页码：103 / 105

页数：3

相关论文

共 7 条

[1] MODELING THE POLYSILICON DEPLETION EFFECT AND ITS IMPACT ON SUBMICROMETER CMOS CIRCUIT PERFORMANCE [J].

ARORA, ND ;

RIOS, R ;

HUANG, CL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :935-943

[2] ON THE EFFECT OF NONDEGENERATE DOPING OF POLYSILICON GATE IN THIN OXIDE MOS-DEVICES ANALYTICAL MODELING [J].

HABAS, P ;

SELBERHERR, S .

SOLID-STATE ELECTRONICS, 1990, 33 (12) :1539-1544

[3] MEASUREMENTS AND MODELING OF MOSFET-IV CHARACTERISTICS WITH POLYSILICON DEPLETION EFFECT [J].

HUANG, CL ;

ARORA, ND .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) :2330-2337

[4] A CAPACITANCE-BASED METHOD FOR EXPERIMENTAL-DETERMINATION OF METALLURGICAL CHANNEL-LENGTH OF SUBMICRON LDD MOSFETS [J].

LEE, SW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :403-412

[5] A SIMPLE METHOD FOR EXTRACTING AVERAGE DOPING CONCENTRATION IN THE POLYSILICON AND SILICON SURFACE-LAYER NEAR THE OXIDE IN POLYSILICON-GATE MOS STRUCTURES [J].

LIN, WW .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (02) :51-53

[6] ANOMALOUS C-V CHARACTERISTICS OF IMPLANTED POLY MOS STRUCTURE IN N+/P+ DUAL-GATE CMOS TECHNOLOGY [J].

LU, CY ;

SUNG, JM ;

KIRSCH, HC ;

HILLENIUS, SJ ;

SMITH, TE ;

MANCHANDA, L .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :192-194

[7] OXIDE-THICKNESS DETERMINATION IN THIN-INSULATOR MOS STRUCTURES [J].

RICCO, B ;

OLIVO, P ;

NGUYEN, TN ;

KUAN, TS ;

FERRIANI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :432-438