Technology and materials issues in semiconductor-based magnetoelectronics

被引：125

作者：

De Boeck, J ^{[1
]}

Van Roy, W ^{[1
]}

Das, J ^{[1
]}

Motsnyi, V ^{[1
]}

Liu, Z ^{[1
]}

Lagae, L ^{[1
]}

Boeve, H ^{[1
]}

Dessein, K ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 04期

关键词：

D O I：

10.1088/0268-1242/17/4/307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There has been an increased interest in the introduction of magnetic thin films into semiconductors. This interest is motivated by the benefit found in using the magnetic thin-film properties (giant or tunnelling magnetoresistance and hysteresis) in magnetic memory (MRAM) products. Furthermore, the use of the electron spin in electronic, spintronic devices requires intimate ferromagnetic/semiconductor combinations. We review the technology and materials aspects of both the MRAM and spintronics fields that highlight the challenges that must be overcome in order to make magnetic (multilayer) films a standard ingredient in future electronics.

引用

页码：342 / 354

页数：13

共 107 条

[11] Spin-tunnel-junction thermal stability and interface interdiffusion above 300 °C [J].