Preparation and properties of SrBi2Ta2O9 ferroelectric thin films using excimer UV irradiation and seed layer

被引：11

作者：

Hayashi, T ^{[1
]}

Togawa, D ^{[1
]}

机构：

[1] Shonan Inst Technol, Fujisawa, Kanagawa 2518511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9B期

关键词：

SrBi2Ta2O9 thin film; sol-gel method; excimer UV irradiation; crystallization; seed layer;

D O I：

10.1143/JJAP.40.5585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature processing of SrBi2Ta2O9 (SBT) thin films on Pt(200 nm)/Ti(50 nm)/SiO2/Si substrates was investigated by the sol-gel method. The excimer UV irradiation onto as-deposited SBT thin films at 200-300 degreesC in O-2 atmosphere and the use of a Sr-Ta-O seed layer were very effective in lowering the crystallization temperature for SBT thin films to 500 degreesC. The SBT thin films prepared by an excimer UV process and subsequent rapid thermal annealing process with the seed layer showed a homogeneous and smooth surface microstructure with fine grains of approximately 50 nm in size. The 600 degreesC-annealed SBT thin films of approximately 200 nm thickness with the seed layer exhibited a Pr of 2.3 muC/cm(2) and a Ec of 43 kV/cm.

引用

页码：5585 / 5589

页数：5

共 6 条

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