Freestanding SiGe/Si/Cr and SiGe/Si/SixNy/Cr microtubes

被引：68

作者：

Golod, SV

Prinz, VY

Wägli, P

Zhang, L

Kirfel, O

Deckhardt, E

Glaus, F

David, C

Grützmacher, D

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Fed Inst Technol Zurich, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[3] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1736317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on hybrid microtubes and rings fabricated from rolled-up strained metal-semiconductor SiGe/Si/Cr and metal-insulator-semiconductor SiGe/Si/SixNy/Cr films. For making suspended microtubes, a method of directional rolling of the patterned films by anisotropic underetching of silicon substrate was introduced. It is shown quantitatively that Cr and SixNy layers are highly strained, the tensile stress being sufficient to cause the rolling-up of the hybrid films into microtubes of preset diameter. The proposed controllable and reproducible technology is promising for fabricating cylindrical-shaped microcapacitors, induction coils, transistors, and building blocks of microelectromechanical devices. (C) 2004 American Institute of Physics.

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页码：3391 / 3393

页数：3

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